Tantalum amide complexes for depositing tantalum-containing films, and method of making same

ABSTRACT

Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a continuation of the U.S. patent application Ser. No.10/684,545 for “Tantalum Amide Complexes for DepositingTantalum-Containing Films, and Method of Making Same” filed on Oct. 14,2003 now U.S. Pat. No. 6,960,675 in the name of Tianniu Chen et al.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to tantalum-amido precursors useful indepositing Ta-containing material on a substrate, e.g., thin film layersof tantalum nitride or tantalum oxide, as well as to the synthesis ofsuch precursors and to deposition methods employing same.

2. Description of the Related Art

Copper is of great interest for use in metallization of VLSImicroelectronic devices because of its low resistivity and contactresistance, as well as its ability to enhance device performance(relative to aluminum metallization) by reducing RC time delays andthereby yielding faster microelectronic devices. Copper chemical vapordeposition (CVD) processes useful in large-scale manufacturing ofmicroelectronic devices, e.g., in conformal filling of high aspect ratiointer-level vias in high density integrated circuits, are actively beingdeveloped and implemented by the electronics industry.

Although Cu CVD has enjoyed progressively wider usage in semiconductormanufacturing, various problems have resisted solution in theintegration of copper in such microelectronic device applications. It iswell established that copper diffuses relatively rapidly through manymaterials, including both metals and dielectrics, especially attemperatures above ˜300° C., resulting in degradation of deviceperformance and reliability, in some instances to the point ofinoperability of the microelectronic device.

To inhibit diffusion of copper in microelectronic devices, barriermaterials have been developed that separate copper metallization regionsfrom vulnerable device regions, to ensure the long-term reliability ofthe copper-based metallurgy in integrated circuits (IC). Effectivebarrier materials generally must possess several characteristics,including a low diffusion coefficient for copper, low electricalresistivity, good thermal stability, effective adhesive interfaces, andthe ability to form good nucleation surfaces to promote <111> texture inthe deposited copper layer.

To achieve effective barrier performance, deposition of the barriermaterial desirably involves good step coverage in high-aspect-ratiodevice features, e.g., dual-damascene trench and via structures. Withprogressively increasing shrinkage of feature sizes in computer chips,CVD and atomic layer deposition (ALD) of the barrier material haveproved advantageous over sputtering and physical vapor deposition (PVD)in achieving uniform-thickness conformal thin films with good stepcoverage in high-aspect ratio device features.

TaN and TaSiN have been demonstrated as suitable metal diffusion barriermaterials. CVD of TaN is currently carried out using Ta(NMe₂)₅,penta(dimethylamino)tantalum (PDMAT). PDMAT is a solid source precursorthat decomposes above 80° C. and has a limited volatility. As such,sublimation is necessary to deposit high purity tantalum-containingfilms, resulting in increased deposition system complexity and costs,relative to CVD utilizing liquid-phase source reagents.

Ta(NEt₂)₅, penta(diethylamino)tantalum (PDEAT) is a liquid, but it isunstable under elevated temperature conditions, readily decomposing to atantalum imide species, Ta(═NEt)(NEt₂)₃, upon heating and therefore,unsatisfactory as a liquid source reagent for TaN barrier layerformation.

t-BuN═Ta(NEt₂)₃, tert-butylimino-tris-(diethylamino)tantalum (TBTDET) isa liquid at room temperature and has been proposed as a precursor fordepositing TaN, but it has various unfavorable characteristics thatlimit its utility. Chief among these is the fact that depositiontemperatures higher than 600° C. are needed to deposit suitably lowresistivity films. Another problem with TBTDET is that too much carbonis incorporated in the deposited tantalum-containing film, and theresulting high carbon layers are highly resistive, and have low densityand reduced effectiveness as diffusional barriers.

TaSiN has been proposed as a diffusion barrier material. CVD processesfor the formation of this ternary barrier layer material have been thefocus of associated development efforts. CVD of TaSiN has been carriedout using PDMAT as the tantalum source and silane as the silicon source.TaCl₅ in combination with silane and ammonia also has been used forforming TaSiN films. Apart from hazards associated with handlingpyrophoric gases such as silane, such approaches require dual sourcereactor configurations to accommodate the multiple precursor species(TaCl₅ or Ta(NMe₂)₅ as the tantalum reagent and silane as the siliconsource). The use of dual source reactor configurations in turnsignificantly increases the cost and complexity of the semiconductormanufacturing operation, relative to the use of a single source reagent.

In all instances, the formation of a Ta-based diffusion barrier bychemical vapor deposition requires an effective CVD approach. The CVDprocess must achieve conformal coating of inter-level (<0.15 μm) viasand sidewall. Additionally, the CVD source reagent must bestorage-stable, of appropriate volatility and vaporizationcharacteristics, with good transport and deposition characteristics forproduction of high-purity, electronic quality thin films. CVD sourcereagents for such purpose are desirably liquid in character, tofacilitate liquid delivery techniques that are consistent with effectivevolatilization and transport of the precursor vapor and the achievementof superior conformal films on the substrate.

Among various chemical vapor deposition techniques, atomic layerdeposition (ALD) has emerged in recent years as a promising candidatefor deposition of thin films in device structures with very smallfeature dimensions. ALD is carried out to achieve successivesingle-monolayer depositions, in which each separate deposition steptheoretically goes to saturation at a single molecular or atomicmonolayer thickness and self-terminates when the monolayer formationoccurs on the surface of the substrate. Single-monolayer depositions areperformed a number of times until a sufficiently thick film has beendeposited on the substrate.

It would therefore be a significant advance in the art to providetantalum precursors that are readily synthesized and suitable for use invapor deposition processes such as ALD or other CVD techiques, that arerobust, that possess good volatilization, transport and depositioncharacteristics, that are amenable to liquid delivery, e.g., by bubblingor direct liquid injection, and that produce tantalum-containing filmssuch as TaN, Ta₂O₅, TaSiN and BiTaO₄, as well as other Ta-nitride andTa-oxide films, of superior quality and performance characteristics.

SUMMARY OF THE INVENTION

The present invention relates generally to tantalum source reagentsuseful for forming Ta-containing material on a substrate, as well as tomethods of making and using such tantalum source reagents.

In one aspect, the present invention relates to a precursor compositioncomprising at least one tantalum species selected from the groupconsisting of:

-   (i) tethered amine tantalum complexes of the formula    (η²-R³N(R⁴)_(n)NR⁵)Ta(NR¹R²)₃:

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–C₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silytene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–C₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1; and

-   (ii) tethered amine tantalum complexes of the formula    (η²-R³N(R⁴)_(n)NR⁵)₂Ta(NR¹R²):

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–C₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–C₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1; and

-   (iii) tantalum amide compounds of the formula:    (R¹R²N)_(5−n)Ta(NR³R⁴)_(n)    -   wherein:    -   each of R¹–R⁴ is independently selected from the group        consisting of C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄        alkylsilyl, C₆–C₁₀ aryl, or alternatively NR¹R² or NR³R⁴ may be        represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6; and

    -   n is 1, 2, 3, or 4.

In another aspect, the invention relates to specific compounds of theforegoing formulae, specifically,η²-N,N′-dimethylethylenediamino-tris-dimethylaminotantalum,η²-N,N′-diethylethylenediamino-tris-dimethylaminotantalum,η²-N,N′-dimethylpropane-diamino-tris-dimethylaminotantalum andbis-diethylamino-tris-dimethylaminotantalum.

In a further aspect, the invention relates to a method of forming Tamaterial on a substrate from a precursor. The method includes vaporizingthe precursor to form a precursor vapor, and contacting the precursorvapor with the substrate to form the Ta material thereon, wherein theprecursor includes at least one tantalum species as describedhereinabove.

Yet another aspect of the invention relates to a process for makingtantalum complexes of formula (I):

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–C₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–C₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1; such process including        reacting a compound of formula (IV) with LiNR⁵(R⁴)_(n)NR³Li:

-   -   wherein R¹–R⁵ and n are as defined above.

Still another aspect of the invention relates to a process for making atantalum complex of formula II:

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–C₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1; and; such process        comprising:

    -   reacting TaX₅ with LiNR⁵(R⁴)_(n)NR³Li to yield a compound of        formula (V):

-   -   -   wherein R³–R⁵ and n are as defined above and X=Cl, Br or I;            and

    -   reacting the compound of formula (V) with LiN(R¹R²), wherein R¹        and R² are as defined above.

In a further aspect, the invention relates to a process for making atantalum amide compound of the formula (III):(R¹R²N)_(5−n)Ta(NR³R⁴)_(n)   (III)

-   -   wherein:    -   each of R¹–R⁴ is independently selected from the group        consisting of C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄        alkylsilyl, C₆–C₁₀ aryl, or alternatively NR¹R² or NR³R⁴ may be        represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6; and

    -   n is 1, 2, 3, or 4.        such process comprising

    -   reacting compound (IV) with LiNR³R⁴:

-   -   wherein R¹–R⁴ are as defined above.

Other aspects and features of the invention will be more fully apparentfrom the ensuing disclosure and appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a Simultaneous Thermal Analysis (STA) plot of 5.15 mg(η²-MeN(CH₂)₂NMe)Ta(NMe₂)₃ (DEMAT) in Ar.

FIG. 2 is a ¹H and ¹³C NMR plot for (η²-MeN(CH₂)₂NMe)Ta(NMe₂)₃ (DEMAT)in benzene-d₆.

FIG. 3 is an STA plot of 9.530 mg (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃.

FIG. 4 is a ¹H NMR plot for (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ in benzene-d₆.

FIG. 5 is an STA plot of 12.141 mg (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃.

FIG. 6 is a ¹H NMR plot for (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ in benzene-d₆.

FIG. 7 is an STA plot of 6.28 mg (NEt₂)₂Ta(NMe₂)₃ in Ar.

FIG. 8 is a ¹H NMR plot for (NEt₂)₂Ta(NMe₂)₃ in toluene-d₈.

DETAILED DESCRIPTION OF THE INVENTION, AND PREFERRED EMBODIMENTS THEREOF

The present invention is based on the discovery of tantalum sourcereagents useful in forming Ta-based barrier layers on substrates, e.g.,TaN, Ta₂O₅, TaSiN and BiTaO₄ barrier layers, for manufacture ofmicroelectronic device structures such as integrated circuitry includingcopper metallization and/or ferroelectric layers.

The Ta precursors of the invention include tantalum species selectedfrom the following group:

-   (i) tethered amine tantalum complexes of the formula    (η²-R³N(R⁴)_(n)NR⁵)Ta(NR¹R²)₃:

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–C₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–C₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1;

-   (ii) tethered amine tantalum complexes of the formula    (η²-R³N(R⁴)_(n)NR⁵)₂Ta(NR¹R²):

-   -   wherein:    -   each of R¹, R², R³ and R⁵ is independently selected from the        group consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl,        C₁–C₄ alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups        such as NR⁶R⁷, wherein R⁶ and R⁷ are the same as or different        from one another and each is independently selected from the        group consisting of H, C₁–₄ alkyl, and C₃–C₈ cycloalkyl, or        alternatively NR¹R² may be represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6;

    -   R⁴ is selected from the group consisting of C₁–C₄ alkylene,        silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸, wherein R⁸ is        selected from the group consisting of H, C₃–C₈ cycloalkyl and        C₁–C₄ alkyl; and

    -   n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄        dialkylsilylene or NR⁸, n must be 1; and

-   (iii) tantalum amide compounds of the formula:    (R¹R²N)_(5−n)Ta(NR³R⁴)_(n)    -   wherein:    -   each of R¹–R⁴ is independently selected from the group        consisting of C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄        alkylsilyl, C₆–C₁₀ aryl, or alternatively NR¹R² or NR³R⁴ may be        represented by the molecular moiety

-   -   -   wherein m=1, 2, 3, 4, 5 or 6; and

    -   n is 1, 2, 3, or 4.

The tantalum precursors of the invention achieve a substantial advancein the art over the use of tantalum precursors previously employed forforming barrier layer films. Considering tantalum nitride as an example,the growth of tantalum nitride barrier layers desirably is carried outwith precursors that are free of oxygen, so that the formation oftantalum oxide is avoided. Tantalum amides, which have preexisting Ta—Nbonds, are therefore desirable in principle, but homoleptic tantalumamides such as Ta(NMe₂)₅ suffer from reduced volatility, as a result ofthe bridging of multiple metal centers through —NMe₂ groups (analogousto that observed for Ta(OEt)₅) and steric congestion around the Ta metalcenter.

By contrast, the tantalum precursors of the present invention haveenhanced thermal stability and volatility as a result of theirstructures, which limit the degree of intermolecular interactions. Forexample, as compared to PDMAT with its two —NMe₂ groups, the use oftethered amine ligands (η²-R³N(R⁴)_(n)NR⁵) in compounds of formula Ibelow provides such monomeric tantalum amide compounds with a stablemetallocyclic structure. Various tethered ligands can be employed.Ligand species of the formula η²-R³N(R⁴)_(n)NR⁵ wherein R³ and R⁵ arethe same as or different from one another, and each is independentlychosen from H, C₁–C₄ alkyl (e.g., Me, Et, t-Bu, i-Pr, etc.), aryl (e.g.,phenyl, phenyl substituted with C₁–C₄ alkyl, halo, silyl or C₁–C₄alkylsilyl, etc.), C₃–C₈ cycloalkyl, or a silicon-containing group suchas silyl (SiH₃), C₁–C₄ alkylsilyl, (e.g., SiMe₃, Si(Et)₃, Si(i-Pr)₃,Si(t-Bu)₃) and alkyl(alkylsilyl)silyl (e.g., Si(SiMe₃)_(x)(Me)_(3-x)),R₄ can be C₁–C₄ alkylene (e.g. methylene, ethylene, etc.), silylene(e.g. —SiH₂—), C₁–C₄ dialkylsilyl (e.g. Si(CH₃)₂, etc.) or alkylamine(e.g. NCH₃, etc.), appropriately selected to confer a specificvolatility, are preferred, wherein n is 1, 2, 3, or 4 to provide stablechelating ring structures.

The tantalum amide compounds of formula II below feature two of thechelating (η²-R³N(R⁴)_(n)NR⁵) ligands, wherein n and the various Rgroups are as defined in connection with formula I hereinabove.

Another class of tantalum compounds of the invention include tantalumamides that are unsymmetrical in character, and utilize (R¹R²N)_(5−n)and (NR³R⁴)_(n) as ligands of mixed ligand complexes of formula III:(R¹R²N)_(5−n)Ta(NR³R⁴)_(n),in which each of R¹–R⁴ is independently chosen from C₁–C₄ alkyl (e.g.,Me, Et, t-Bu, i-Pr, etc.), C₆–C₁₀ aryl (e.g., phenyl, phenyl substitutedwith C₁–C₄ alkyl, halo, silyl or C₁–C₄ alkylsilyl, etc.), C₃–C₈cycloalkyl or a silicon-containing group such as silyl (SiH₃), C₁–C₄alkylsilyl, (for example, SiMe₃, Si(Et)₃, Si(i-Pr)₃, Si(t-Bu)₃) andalkyl(alkylsilyl)silyl (e.g., Si(SiMe₃)_(x)(Me)_(3−x)), and n is 1, 2,3, or 4. Alternatively, NR¹R² or NR³R⁴ may be represented by themolecular moiety

wherein m=1, 2, 3, 4, 5 or 6.

The Ta source reagents of the invention have suitable volatilitycharacteristics for applications such as CVD.

In application to vapor deposition processes such as liquid delivery,atomic layer deposition or other chemical vapor deposition techniques,the precursors of the invention may be employed in neat liquid form, oralternatively such precursors may be utilized in formulations, e.g., ina solution or suspension of the precursor in a compatible liquid solventor suspending medium, such as the solvent compositions disclosed in U.S.Pat. No. 5,820,664, issued Oct. 13, 1998, in the names of Robin A.Gardiner et al.

The term “liquid delivery” refers to the liquid form of the precursorcomposition being employed for delivery of the material to be depositedon the substrate in the vapor deposition process. When the precursorcompound is a liquid phase neat material, it is vaporized to produce acorresponding precursor vapor that is then is transported to thedeposition chamber, to form a film or coating of the deposition specieson the substrate. Alternatively, the source reagent may be dissolved orsuspended in a liquid that is vaporized to place the source reagent inthe vapor phase for the deposition operation.

The solvent for such purpose can be any suitable solvent medium, e.g., asingle-component solvent, or a solvent mixture of multiple solventspecies. The solvent in one embodiment of the invention is selected fromamong C₆–C₁₀ alkanes, C₆–C₁₀ aromatics, and compatible mixtures thereof.Illustrative alkane species include hexane, heptane, octane, nonane anddecane. Preferred alkane solvent species include C₈ and C₁₀ alkanes.Preferred aromatic solvent species include toluene and xylene.

It will be appreciated that various syntheses are useful for preparationof tantalum source compounds of the present invention, as will bereadily apparent to those of ordinary skill in the art. Illustrativesynthetic methods for production of compounds within the broad scope ofthe present invention are set out below by way of example, it beingunderstood that compounds of the invention are amenable to manufactureby various other synthesis routes and methods within the skill in theart, and that the illustrative synthesis methods set out below aretherefore not to be limitingly construed as regards the scope of theinvention.

Synthesis Reaction Schemes for Compounds of Formula I

One illustrative synthesis scheme for compounds of formula I hereof isset out below:

Alternatively, compounds of formula I may be synthesized as follows:

Synthesis Reaction Schemes for Compounds of Formula II

One illustrative synthesis scheme for compounds of formula II hereof isset out below:

Alternatively, compounds of formula II may be synthesized as follows:

Synthesis Reaction Schemes for Compounds of Formula III

An illustrative synthesis scheme for compounds of formula III hereof isset out below:

The present invention also contemplates the use of silyl amides with assingle source precursors useful in forming TaSiN layers on substrates ina direct and cost-effective manner. Examples include precursors of thegeneral formula III:(R¹R²N)_(5−n)Ta(NR³R⁴)_(n),in which each of R¹–R⁴ is independently chosen from C₁–C₄ alkyl (e.g.,Me, Et, t-Bu, i-Pr, etc.), C₆–C₁₀ aryl (e.g., phenyl, phenyl substitutedwith C₁–C₄ alkyl, halo, silyl or C₁–C₄ alkylsilyl, etc.), or asilicon-containing group such as silyl (SiH₃), C₁–C₄ alkylsilyl, (forexample, SiMe₃, Si(Et)₃, Si(i-Pr)₃, Si(t-Bu)₃) andalkyl(alkylsilyl)silyl (e.g., Si(SiMe₃)_(x)(Me)_(3-x)), and n is 1, 2,3, or 4, with the proviso that at least one of R¹, R², R³ and R⁴ is asilicon-containing group. The number of silicon-containing R groups canbe varied as necessary or desirable to control the amount of silicon inthe film.

For liquid delivery deposition of Ta-based films or coatings on asubstrate, the source reagent material is provided as a liquid startingmaterial, e.g., as a neat liquid-phase compound, or in a suitableformulation including a solvent medium suitable for dissolving orsuspending the precursor compound, and the liquid starting material thenis vaporized to form the precursor vapor for the vapor depositionprocess.

The vaporization may be carried out by injection of the liquid, e.g., infine jet, mist or droplet form, into a hot zone at an appropriatetemperature for vaporization of the source reagent liquid. Suchinjection may be carried out with a nebulization or atomizationapparatus of conventional character, producing a dispersion offinely-divided liquid particles, e.g., of sub-micron to millimeterdiameter. The dispersed liquid particles may be directed at a substrateat a sufficiently high temperature to decompose the source reagent andproduce a coating of the desired Ta-based material on the substrate.

Alternatively, the liquid may be dispensed from a suitable supply vesselcontaining same, so that it issues onto a volatilization element, suchas a screen, grid or other porous or foraminous structure, which isheated to a sufficiently high temperature to cause the liquid to flashvolatilize into the vapor phase, as described in U.S. Pat. No. 5,204,314to Peter S. Kirlin, et al. and U.S. Pat. No. 5,711,816 to Peter S.Kirlin, et al.

Regardless of the manner of volatilization of the source reagent, thevapor thereof is flowed to contact the substrate on which the Ta-basedmaterial is to be deposited, at appropriate deposition conditionstherefor, as are readily determinable within the skill of the artwithout undue experimentation, by the expedient of varying the processconditions (temperature, pressure, flow rate, etc.) and assessing thecharacter and suitability of the resulting deposited material.

The deposition of the Ta material on the substrate may be carried out inthe broad practice of the invention in any suitable manner, as regardsthe precursor compound of the invention, and the substrate and processconditions employed. For example, carrier gases may be employed fortransport of the precursor vapor, such as inert gases (e.g., helium,argon, etc.) or a carrier gas appropriate to provide a desired ambientin the deposition chamber (e.g., an oxygen-containing gas, nitrogen, orother suitable carrier gas species).

In one embodiment of the invention, atomic layer deposition (ALD) isemployed for depositing the Ta-based material on the substrate. Forexample, the ALD process may be carried out in which the substrate isexposed sequentially and alternately to at least two mutually reactivereactants. In such approach, the substrate is exposed to the firstspecies and the first species is deposited onto the surface of thesubstrate until the surface is occupied with a monolayer of the firstspecies (saturation). Following surface saturation, the supply of thefirst deposited species is cut-off and the reaction chamber is evacuatedand/or purged to remove the traces of the first species from the gasphase. Next, the substrate is exposed to the second species whichinteracts with the deposited first species until the monolayer of thefirst species has fully interacted with the second species and thesurface of the substrate is covered with a monolayer of the product ofthe first and second species (saturation). Following saturation by thesecond species, the supply of the second species is cut-off and thereaction chamber is evacuated and/or purged to remove the traces ofnon-reacted second species from the gas phase. This cycle can berepeated a number of times until a sufficiently thick film has beendeposited onto the substrate. Notably, more than two species may beused, e.g., for the deposition of ternary or more complicated compoundsor multilayers.

The features and advantages of the invention are more fully shown by thefollowing non-limiting examples.

EXAMPLE 1

In this example,η²-N,N′-dimethylethylenediamino-tris-dimethylaminotantalum,(η²-MeN(CH₂)₂NMe)Ta(NMe₂)₃ (DEMAT), was synthesized at high purity andin good yield.

The synthesis of DEMAT was carried out using standard Schlenktechniques. 15.8 mL n-butyl lithium (1.6 M in hexanes, 0.025 mol) wasadded to a 100 mL Schlenk flask immersed in an ice bath and charged with1.11 g N,N′-dimethylethylenediamine (0.013 mol) in 50 mL hexanes. Whiteprecipitation appeared after the addition started and the reaction wasexothermic. The reaction mixture comprising MeNLi(CH₂)₂LiNMe was allowedto warm to room temperature. Next the MeNLi(CH₂)₂LiNMe mixture was addeddropwise to 4.39 g [(MeN)₃TaCl₂]₂ (5.71 mmol) in 100 mL hexanes at roomtemperature and stirred overnight. Following filtration, the dark brownfiltrate was recovered. The volatiles from the filtrate were removed invacuo at room temperature followed by vacuum distillation at 79° C. and50 mTorr to yield 3.06 g of red orange (η²-MeN(CH₂)₂NMe)Ta(NMe₂)₃(DEMAT) (59% yield). Atomic percentage calculated for TaC₁₀H₂₈N₅: C,30.08%; H, 7.07%; N, 17.54%. Found: C, 29.89%; H, 6.94%; N, 17.52%.

FIG. 1 shows that DEMAT is thermally-stable up to its boilingtemperature and undergoes complete material transport below 200° C.Further, DEMAT is volatile enough and thermally stable enough to bepurified by vacuum distillation. In contrast, PDEAT andpentaethylmethylaminotantalum (PEMAT) are unstable and cannot bepurified by vacuum distillation. As such, DEMAT exhibits advantages overPDMAT, PEMAT, and PDEAT in terms of thermal stability and volatility.

FIG. 2 shows the ¹H and ¹³C NMR plot of DEMAT in benzene-d₆ at 21° C. ¹HNMR: δ 3.85 (s, 4H, CH₃N(CH₂)₂—); 3.33 (s, 6H, CH₃N—); 3.24 (s, 18H,(CH₃)₂N—). ¹³C NMR plot: δ 62.20 (CH₃N(CH₂)₂—); 45.36 ((CH₃)₂N—); 44.33(CH₃N(CH₂)₂—).

EXAMPLE 2

In this example,η²-N,N′-diethylethylenediamino-tris-dimethylaminotantalum,(η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ (DEMAT), was synthesized at high purity andin good yield.

The synthesis of (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ was carried out usingstandard Schlenk techniques. 13.4 mL n-butyl lithium (1.6 M in hexanes,0.021 mol) was added to a 250 mL Schlenk flask immersed in an ice bathand charged with 1.11 g N,N′-diethylethylenediamine (0.011 mol) in 100mL hexanes. White precipitation appeared after the addition started andthe reaction was exothermic. The reaction mixture comprisingEtNLi(CH₂)₂LiNEt was allowed to warm to room temperature. Next theEtNLi(CH₂)₂LiNEt mixture was added dropwise to 4.14 g [(MeN)₃TaCl₂]₂(5.39 mmol) in 100 mL hexanes at room temperature and stirred overnight.Following filtration, the dark brown filtrate was recovered. Thevolatiles from the filtrate were removed in vacuo at room temperaturefollowed by vacuum distillation at 77° C. and 65 mTorr to yield 2.01 gof golden yellow liquid (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ (44% yield). Atomicpercentage calculated for TaC₁₂H₃₂N₅: C, 33.72%; H, 7.55%; N, 16.39%.Found: C, 33.42%; H, 7.46%; N, 16.22%.

FIG. 3 shows that (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ is thermally-stable up toits boiling temperature and undergoes complete material transport below200° C. Further, (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ is a liquid and thus isvolatile enough and thermally stable enough to be purified by vacuumdistillation. As such, (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ exhibits advantagesover PDMAT, PEMAT, and PDEAT in terms of thermal stability andvolatility.

FIG. 4 shows the ¹H and ¹³C NMR plot of (η²-EtN(CH₂)₂NEt)Ta(NMe₂)₃ inbenzene-d₆ at 21° C. ¹H NMR: δ 3.80 (s, 4H, CH₃CH₂N(CH₂)₂—); 3.52 (q,4H, CH₃CH₂N—); 3.22 (s, 18H, (CH₃)₂N—); 1.17 (t, 6H, CH₃CH₂N—). ¹³C NMRplot: δ 58.54 (CH₃CH₂N(CH₂)₂—); 51.76 ((CH₃CH₂N(CH₂)₂—); 45.41((CH₃)₂N—); 17.80 (CH₃CH₂N(CH₂)₂—).

EXAMPLE 3

In this example,η²-N,N′-dimethylpropanediamino-tris-dimethylaminotantalum,(η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃, was synthesized at high purity and in goodyield.

The synthesis of (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ was carried out usingstandard Schlenk techniques. 16.4 mL n-butyl lithium (1.6 M in hexanes,0.026 mol) was added to a 100 mL Schlenk flask immersed in an ice bathand charged with 1.34 g N,N′-dimethylpropanediamine (0.013 mol) in 50 mLhexanes. White precipitation appeared after the addition started and thereaction was exothermic. The reaction mixture comprisingMeNLi(CH₂)₃LiNMe was allowed to warm to room temperature. Next theMeNLi(CH₂)₃LiNMe mixture was added dropwise to 5.02 g [(MeN)₃TaCl₂]₂(6.54 mmol) in 30 mL hexanes at room temperature and stirred andrefluxed at 80° C. overnight. Following filtration, the dark brownfiltrate was recovered. The volatiles from the filtrate were removed invacuo at room temperature followed by vacuum distillation at 85° C. and50 mTorr to yield 2.05 g of yellow orange liquid(η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ (38% yield). Atomic percentage calculated forTaC₁₁H₃₀N₅: C, 31.96%; H, 7.32%; N, 16.94%. Found: C, 31.74%; H, 7.46%;N, 16.82%.

FIG. 5 shows that (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ is thermally-stable up toits boiling temperature and undergoes complete material transport below210° C. Further, (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ is volatile enough andthermally stable enough to be purified by vacuum distillation. As such,(η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ exhibits advantages over PDMAT, PEMAT, andPDEAT in terms of thermal stability and volatility.

FIG. 6 shows the ¹H and ¹³C NMR plot of (η²-MeN(CH₂)₃NMe)Ta(NMe₂)₃ inbenzene-d₆ at 21° C. ¹H NMR: δ 3.44 (m, br, 4H, CH₃NCH₂—); 3.26 (s, 18H,(CH₃)₂N—); 3.22 (s, 6H, CH₃NCH₂—); 1.85 (m, 2H, CH₃NCH₂CH₂—). ¹³C NMRplot: δ 58.60, 57.88 (CH₃NCH₂—); 45.88, 45.66 ((CH₃)₂N—); 44.90, 44.61(CH₃NCH₂—); 32.23, 31.74 (CH₃NCH₂CH₂—). The NMR spectra are consistentwith the assigned structure. The complicated patterns in the ¹H spectraare attributable to cis- (when the —NMe(CH₂)₃MeN— ligand occupies theequatorial positions in the trigonal bipyramidal geometry) and trans-isomers (when the —NMe(CH₂)₃MeN— ligand occupies the axial positions inthe trigonal bipyramidal geometry) in the solution:

EXAMPLE 4

In this example, bis-diethylamino-tris-dimethylaminotantalum,(NEt₂)₂Ta(NMe₂)₃ was synthesized in high purity and in good yield. Thesynthesis of (NEt₂)₂Ta(NMe₂)₃ was carried out using standard Schlenktechniques. 32.2 mL n-butyl lithium (1.6 M in hexanes, 0.052 mol) wasadded to a 250 mL Schlenk flask immersed in an ice water bath andcharged with 5.34 mL diethylamine (3.78 g, 0.052 mol) in 50 mL hexanes.White precipitation appeared after the addition started and the reactionwas exothermic. The reaction mixture comprising LiNEt₂ was allowed towarm to room temperature. Next, the LiNEt₂ mixture was added dropwise to4.51 g [(MeN)₃TaCl₂]₂ (5.87 mmol) in 100 mL hexanes at room temperatureand stirred overnight. Following filtration, the dark brown filtrate wasrecovered. The volatiles from the filtrate were removed in vacuo at roomtemperature to yield 4.10 g of dark yellow (NEt₂)₂Ta(NMe₂)₃ (76% yield).Atomic percentage calculated for TaC₁₄H₃₈N₅: C, 36.76%; H, 8.37%; N,15.31%. Found: C, 36.56%; H, 8.30%; N, 14.97%.

FIG. 7 shows that (NEt₂)₂Ta(NMe₂)₃ is stable to heat up to its boilingtemperature and undergoes complete material transport below 200° C.

FIG. 8 shows the ¹H NMR plot of (NEt₂)₂Ta(NMe₂)₃ in toluene-d₈ at 21° C.¹H NMR: δ 3.56 (m, 8H, CH₃CH₂N—); 3.29 (m, 18H, (CH₃)₂N—); 1.14 (m, 12H,CH₃CH₂N—). ¹³C NMR: δ 47.64, 46.69 (CH₃CH₂N—); 47.31, 47.09 ((CH₃)₂N—);16.7, 16.0 (CH₃CH₂N—). The NMR spectra are consistent with the assignedstructure; the complicated patterns in the ¹H spectra were attributableto cis- and trans- isomers in the solution:

While the invention has been described illustratively herein withrespect to specific aspects, features and embodiments thereof, it is tobe appreciated that the utility of the invention is not thus limited,but rather extends to and encompasses other aspects, features andembodiments, such as will readily suggest themselves to those ofordinary skill in the art, based on the disclosure herein. The inventiontherefore is intended to be broadly construed and interpreted, asincluding all such aspects, features and alternative embodiments withinthe spirit and scope of the claims set forth hereafter.

1. A method of making a microelectronic device, comprising vaporizing aprecursor to form a precursor vapor, and contacting the precursor vaporwith a substrate to form said Ta material thereon, wherein saidmicroelectronic device comprises said substrate, and wherein theprecursor comprises at least one tantalum species selected from thegroup consisting of: (i) tethered amine tantalum complexes of theformula (I):

wherein: each of R¹, R², R³ and R⁵ is independently selected from thegroup consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups such as NR⁶R⁷,wherein R⁶ and R⁷ are the same as or different from one another and eachis independently selected from the group consisting of H, C₁–C₄ alkyl,and C₃–C₈ cycloalkyl, or alternatively NR¹R² may be represented by themolecular moiety

wherein m=1, 2, 3, 4, 5 or 6; R⁴ is selected from the group consistingof C₁–C₄ alkylene, silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸,wherein R⁸ is selected from the group consisting of H, C₃–C₈ cycloalkyland C₁–C₄ alkyl; and n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄dialkylsilylene or NR⁸, n must be 1; (ii) tethered amine tantalumcomplexes of the formula (II):

wherein: each of R¹, R², R³ and R⁵ is independently selected from thegroup consisting of H, C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄alkylsilyl, C₆–C₁₀ aryl and nitrogen-containing groups such as NR⁶R⁷,wherein R⁶ and R⁷ are the same as or different from one another and eachis independently selected from the group consisting of H, C₁–C₄ alkyl,and C₃–C₈ cycloalkyl, or alternatively NR¹R² may be represented by themolecular moiety

wherein m=1, 2, 3, 4, 5 or 6; R⁴ is selected from the group consistingof C₁–C₄ alkylene, silylene (—SiH₂—), C₁–C₄ dialkylsilylene and NR⁸,wherein R⁸ is selected from the group consisting of H, C₃–C₈ cycloalkyland C₁–C₄ alkyl; and n is 1, 2, 3, or 4, but where R⁴ is silylene, C₁–C₄dialkylsilylene or NR⁸, n must be 1; and (iii) tantalum amide compoundsof the formula (III):(R¹R²N)_(5−n)Ta(NR³R⁴)_(n)   (III) wherein: at least one of NR¹R² andNR³R⁴ may be represented by the molecular moiety

wherein m=1, 2, 3, 4, 5 or 6, and wherein when only one of NR¹R² andNR³R⁴ is said molecular moiety

the other of NR¹R² and NR³R⁴ has substituents R¹ and R² in the case ofNR¹R² and R³ and R⁴ in the case of NR³R⁴ which are the same as ordifferent from one another and each is independently selected from thegroup consisting of C₁–C₄ alkyl, silyl, C₃–C₈ cycloalkyl, C₁–C₄alkylsilyl, and C₆–C₁₀ aryl, and n is 1, 2, 3, or
 4. 2. The method ofclaim 1, wherein said precursor comprises at least one tantalum speciesselected from tethered amine tantalum complexes of formula (I).
 3. Themethod of claim 1, wherein said precursor comprises at least onetantalum species selected from tethered amine tantalum complexes offormula (II).
 4. The method of claim 1, wherein said precursor comprisesat least one tantalum species selected from tantalum amide compound offormula (III).
 5. The method of claim 1, wherein said microelectronicdevice comprises copper metallization.
 6. The method of claim 1, whereinsaid microelectronic device comprises a ferroelectric film.
 7. Themethod of claim 1, wherein said contacting comprises chemical vapordeposition.
 8. The method of claim 1, wherein said contacting comprisesatomic layer deposition.